PART |
Description |
Maker |
SI4738CY |
N-Channel Synchronous MOSFETs with Break-Before-Make
|
Vishay
|
SI4724CY-T1 SI4724CY-T1-E3 |
N-Channel Synchronous MOSFETs With Break-Before-Make
|
Vishay Siliconix
|
SI4770CY |
N-Channel Synchronous MOSFETs with Break-Before-Make
|
Vishay
|
LTC1266 LTC1266-3.3 LTC1266-33 LTC1266-5 LTC1266AC |
From old datasheet system Synchronous Regulator Controller for N- or P-Channel MOSFETs
|
LINER[Linear Technology]
|
IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范,以.1A的,80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation] Harris Semiconductor Harris, Corp.
|
IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IXTH28N50Q IXTT28N50Q |
Discrete MOSFETs: Standard N-channel Types Power MOSFETs Q-Class
|
International Rectifier IXYS Corporation
|
IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation] ETC[ETC]
|
UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630- |
9A, 200V, 0.4?/a> , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS 9A条,00V.4з的N通道功率MOSFET
|
UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd.
|